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Innovation is the core of our business. Dow Corning pioneered
the science of silicon-based materials in 1943. Today you can blaze the trails
again in the world of microelectronics with silicon carbide (SiC) based
solutions that are advancing the technology of compound
semiconductors.
What's Behind Our SiC Wafers
You can count on a reliable source of high-quality silicon carbide wafers
and epitaxy services, as we put our advanced materials expertise and rigorous
manufacturing protocols to your service. But it is what’s behind the
wafer that sets us apart, helping our customers compete and win in this rapidly
evolving industry.
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Intelligence - Expertise in scale-up and sustainable high-volume
manufacturing
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Investment - World-class production facility
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Infrastructure - Business strategies, processes and solutions
aligned to the principles of sustainability
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Integrity - Focused on supply reliability for long-term customer
success
Silicon Carbide Products and Services to Meet Your
Needs
Dow Corning Compound Semiconductor Solutions fabricates
wafers using proprietary crystal growth methods and precision wafering
processes to meet the performance and consistency required for high yields in
semiconductor device manufacturing processes. Optimal product performance is
obtained with Dow Corning Compound Semiconductor wafers and expitaxy
Dow Corning offers a variety of silicon carbide product
options to suit your specific needs:
4H n+
Conductive SiC Wafers - available in test grades for research, in
commercial grade for high-volume production, or in prime where top-end wafer
specifications are required.
SiC
Epitaxy- Epi-layers (n+ or n-) are available on wafers from Dow
Corning Compound Semiconductor Solutions or on customer supplied wafers.
Specifications can be tuned to customer needs, with thickness up to 20 ums.
For more silicon carbide
product solutions or to find out how Dow Corning can help with your
compound semiconductor applications, contact us. |
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